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DAMO: Deep Agile Mask Optimization for Full Chip Scale

About

Continuous scaling of the VLSI system leaves a great challenge on manufacturing and optical proximity correction (OPC) is widely applied in conventional design flow for manufacturability optimization. Traditional techniques conducted OPC by leveraging a lithography model and suffered from prohibitive computational overhead, and mostly focused on optimizing a single clip without addressing how to tackle the full chip. In this paper, we present DAMO, a high performance and scalable deep learning-enabled OPC system for full chip scale. It is an end-to-end mask optimization paradigm which contains a Deep Lithography Simulator (DLS) for lithography modeling and a Deep Mask Generator (DMG) for mask pattern generation. Moreover, a novel layout splitting algorithm customized for DAMO is proposed to handle the full chip OPC problem. Extensive experiments show that DAMO outperforms the state-of-the-art OPC solutions in both academia and industrial commercial toolkit.

Guojin Chen, Wanli Chen, Yuzhe Ma, Haoyu Yang, Bei Yu• 2020

Related benchmarks

TaskDatasetResultRank
Inverse LithographyICCAD 2013 (Avg)
EPE11
17
Inverse Lithography TechnologyLithoBench MetalSet Metal Layer
L2 Error3.26e+4
12
Inverse Lithography TechnologyLithoBench StdMetal Metal Layer In-distribution
L2 Error1.61e+4
12
Inverse Lithography TechnologyLithoBench ViaSet Via Layer
L2 Error5.08e+3
11
Inverse Lithography TechnologyLithoBench StdContact (Via Layer, OOD)
L2 Error (Via Layer OOD)5.04e+4
11
Mask OptimizationICCAD contest benchmark 2013 (test)
L2 Error3.37e+4
10
Mask Generation (OPC)GAN-OPC synthetic 32 nm M1 (test)
L2 Distance8.47e+3
5
Mask Generation (OPC)LithoBench MetalSet 32 nm metal-layer ILT (test)
L2 Error3.37e+4
5
Mask Generation (OPC)LithoBench ViaSet 45 nm via-layer ILT (test)
L2 Error5.98e+3
5
Mask Generation (OPC)MaskOpt ILT 45 nm metal-layer (test)
L2 Error5.90e+4
5
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