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MorphOPC: Advancing Mask Optimization with Multi-scale Hierarchical Morphological Learning

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As feature sizes shrink to the nanometer scale, accurately transferring circuit patterns from photomasks to silicon wafers becomes increasingly challenging. Optical proximity correction (OPC) is widely used to ensure pattern fidelity and manufacturability. Recent generative mask optimization models based on encoder-decoder architecture can synthesize near-optimal masks, serving as fast machine learning (ML) surrogates for traditional OPC. However, these models often fail to capture the geometric transformations from target layouts to mask patterns, leading to suboptimal quality. In this work, we formulate mask generation as a sequence of morphological operations on local layout features and propose \textit{MorphOPC}, a multi-scale hierarchical model with neural morphological modules to learn these transformations. Experiments on edge-based OPC and ILT benchmarks across metal and via layers show that \textit{MorphOPC} consistently outperforms state-of-the-art methods, achieving higher printing fidelity and lower manufacturing cost, demonstrating strong potential for scalable mask optimization.

Yuting Hu, Lei Zhuang, Chen Wang, Ruiyang Qin, Hua Xiang, Gi-joon Nam, Jinjun Xiong• 2026

Related benchmarks

TaskDatasetResultRank
Inverse LithographyICCAD 2013 (Avg)
EPE10.5
17
Mask OptimizationICCAD contest benchmark 2013 (test)
L2 Error3.19e+4
10
Mask Generation (OPC)GAN-OPC synthetic 32 nm M1 (test)
L2 Distance8.11e+3
5
Mask Generation (OPC)LithoBench MetalSet 32 nm metal-layer ILT (test)
L2 Error3.19e+4
5
Mask Generation (OPC)LithoBench ViaSet 45 nm via-layer ILT (test)
L2 Error4.97e+3
5
Mask Generation (OPC)MaskOpt ILT 45 nm metal-layer (test)
L2 Error4.69e+4
5
Mask Generation (OPC)MaskOpt EBOPC 45 nm metal-layer (test)
L2 Error5.36e+4
3
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